结论
从以上的分析结果来看，改变浇口位置及形式经由分析，结果发现位置不佳时如 Run3，上下 模流动波前不平衡，易造成包封、晶垫位移和晶 片-金线间短路等缺陷。
造成金线偏移最主要的原因是塑料接触到 金线的拖曳力。在芯片的角落处，金线偏移量明 显较大，因其正向压力造成的黏滞拖曳力是整组 中最大。充填时熔胶温度越低，黏度越大，拖曳 力就大，偏移量就会越大。故浇口离芯片的角落 越近如 Run3，金线偏移量越大，最大的金线偏移 就发生在浇口离芯片角落处近的金线中点位置。 建议浇口选择离金线区域较远处如 Run1，这 样塑料充填到金线时黏度才不会大，金线偏移就会比较小。
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